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HSC277 |
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| Part Number | HSC277 |
| Manufacturer | Hitachi Semiconductor |
| Description | HSC277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch ADE-208-413 (Z) Rev. 0 Dec. 1995 Features • Low forward resistance. (rf = 0.7 max) • Ultra small F lat P ackage (UFP) is suitable f... |
| Features |
• Low forward resistance. (rf = 0.7 max) • Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HSC277 Cathode Mark Laser Package Code UFP Outline Cathode mark 1 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Power dissipation Operation temperature Storage temperature Symbol VR Tj Pd Topr Tstg Value 35 125 150 –20 to +60 –45 to +125 Unit V °C mW °C °C HSC277 Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Symbol V... |
| Document |
 HSC277 Data Sheet
PDF 26.66KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HSC276 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Mixer |
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| 2 | HSC276A |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Mixer |
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| 3 | HSC278 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
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| 4 | HSC200 |
TE |
Aluminium Housed Power Resistors |
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| 5 | HSC2228Y |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
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