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HRP50N06K HRP50N06K 60V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 11.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested July 2014 BVDSS = 60 V RDS(on) typ = Pȍ ID = 40 A TO-220 1.
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 11.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested
July 2014
BVDSS = 60 V RDS(on) typ = Pȍ ID = 40 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Volta.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HRP5 |
Rohm |
LSI Assembly |
|
| 2 | HRP55N10K |
SemiHow |
N-Channel MOSFET |
|
| 3 | HRP56N08K |
SemiHow |
N-Channel MOSFET |
|
| 4 | HRP01 |
HOPERF |
Relative Pressure Sensor |
|
| 5 | HRP100N08K |
SemiHow |
N-Channel Trench MOSFET |
|
| 6 | HRP105N15H |
SemiHow |
N-Channel Trench MOSFET |
|
| 7 | HRP120N10K |
SemiHow |
N-Channel Trench MOSFET |
|
| 8 | HRP130N06K |
SemiHow |
N-Channel Trench MOSFET |
|
| 9 | HRP140N06K |
SemiHow |
N-Channel Trench MOSFET |
|
| 10 | HRP160306-CSC3 |
CT Micro |
SMD Type Red Emitter |
|
| 11 | HRP180N10K |
SemiHow |
N-Channel Trench MOSFET |
|
| 12 | HRP22 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Rectifying |
|