Specifications 1. ABSOLUTE MAXIMUM RATINGS: Parameter Symbol Conditions Supply voltage US+ Ta = 25℃ Storage Pressure temperature overload Ts Min -40 Max 12 +150 90 Unit V ℃ KPa 2. ELECTRICAL CHARACTERIASTICS (Reference condition: Supply Voltage Vs+ = 5 Vdc;Ambient Temperature Ta = 25℃ ) Parameter Min Typ Max Unit Notes Operating Preessure Range Operatin.
6-755-82973550 E-mail: [email protected] http://www.hoperf.com 1 of 5 Relative Pressure Sensor System HRP01 Datasheet REV1.0 2.HRP01 Pin Description Specifications 1. ABSOLUTE MAXIMUM RATINGS: Parameter Symbol Conditions Supply voltage US+ Ta = 25℃ Storage Pressure temperature overload Ts Min -40 Max 12 +150 90 Unit V ℃ KPa 2. ELECTRICAL CHARACTERIASTICS (Reference condition: Supply Voltage Vs+ = 5 Vdc;Ambient Temperature Ta = 25℃ ) Parameter Min Typ Max Unit Notes Operating Preessure Range Operating Temperature Range Bridge Resistance Zero Pressure Offset Span (Full scale range ) 30 Kpa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HRP100N08K |
SemiHow |
N-Channel Trench MOSFET | |
2 | HRP105N15H |
SemiHow |
N-Channel Trench MOSFET | |
3 | HRP120N10K |
SemiHow |
N-Channel Trench MOSFET | |
4 | HRP130N06K |
SemiHow |
N-Channel Trench MOSFET | |
5 | HRP140N06K |
SemiHow |
N-Channel Trench MOSFET | |
6 | HRP160306-CSC3 |
CT Micro |
SMD Type Red Emitter | |
7 | HRP180N10K |
SemiHow |
N-Channel Trench MOSFET | |
8 | HRP22 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Rectifying | |
9 | HRP2540 |
Intersil Corporation |
Power Rectifier/Power Surge Suppressor | |
10 | HRP30N04K |
SemiHow |
N-Channel MOSFET | |
11 | HRP32 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Rectifying | |
12 | HRP33N04K |
SemiHow |
N-Channel MOSFET |