HRP120N10K HRP120N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 10 mΩ ID = 73 A TO-.
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V 100% Avalanche Tested
December 2014
BVDSS = 100 V RDS(on) typ = 10 mΩ ID = 73 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HRP100N08K |
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N-Channel Trench MOSFET |
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2 | HRP105N15H |
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N-Channel Trench MOSFET |
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3 | HRP130N06K |
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N-Channel Trench MOSFET |
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4 | HRP140N06K |
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N-Channel Trench MOSFET |
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5 | HRP160306-CSC3 |
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SMD Type Red Emitter |
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6 | HRP180N10K |
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N-Channel Trench MOSFET |
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7 | HRP01 |
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Relative Pressure Sensor |
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8 | HRP22 |
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Silicon Schottky Barrier Diode for Rectifying |
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9 | HRP2540 |
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Power Rectifier/Power Surge Suppressor |
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10 | HRP30N04K |
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N-Channel MOSFET |
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11 | HRP32 |
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Silicon Schottky Barrier Diode for Rectifying |
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12 | HRP33N04K |
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N-Channel MOSFET |
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