HRP120N10K - SemiHow

HRP120N10K N-Channel Trench MOSFET

HRP120N10K HRP120N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 65 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 10 mΩ ID = 73 A TO-.

Features

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 65 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 10 mΩ ID = 73 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current
  – Continuous (TC = 25℃)
  – Continuous (TC = 100℃)
  – Pulsed (Note 1) Gate-Source Vol.