HRP100N08K HRP100N08K 80V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 73 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 8.5 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 2014 BVDSS = 80 V RDS(on) typ = 8.5 mΩ ID = 65 A TO-.
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 73 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 8.5 mΩ (Typ.) @VGS=10V 100% Avalanche Tested
December 2014
BVDSS = 80 V RDS(on) typ = 8.5 mΩ ID = 65 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HRP105N15H |
SemiHow |
N-Channel Trench MOSFET | |
2 | HRP120N10K |
SemiHow |
N-Channel Trench MOSFET | |
3 | HRP130N06K |
SemiHow |
N-Channel Trench MOSFET | |
4 | HRP140N06K |
SemiHow |
N-Channel Trench MOSFET | |
5 | HRP160306-CSC3 |
CT Micro |
SMD Type Red Emitter | |
6 | HRP180N10K |
SemiHow |
N-Channel Trench MOSFET | |
7 | HRP01 |
HOPERF |
Relative Pressure Sensor | |
8 | HRP22 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Rectifying | |
9 | HRP2540 |
Intersil Corporation |
Power Rectifier/Power Surge Suppressor | |
10 | HRP30N04K |
SemiHow |
N-Channel MOSFET | |
11 | HRP32 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Rectifying | |
12 | HRP33N04K |
SemiHow |
N-Channel MOSFET |