HRP40N08K - SemiHow

HRP40N08K N-Channel Trench MOSFET

HRP40N08K HRP40N08K 80V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 190nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3 mΩ (Typ.) @VGS=10V  100% Avalanche Tested Jan 2015 BVDSS = 80 V RDS(on) typ = 3 mΩ ID = 180 A TO-220 1 2 3 .

Features

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 190nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3 mΩ (Typ.) @VGS=10V  100% Avalanche Tested Jan 2015 BVDSS = 80 V RDS(on) typ = 3 mΩ ID = 180 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current
  – Continuous (TC = 25℃)
  – Continuous (TC = 100℃)
  – Pulsed (Note 1) Gate-Source Voltage .