HRP30N04K - SemiHow

HRP30N04K N-Channel MOSFET

HRP30N04K HRP30N04K 40V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 200 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 40 V RDS(on) typ = 2.5mΩ ID = 230 A TO-2.

Features

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 200 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 40 V RDS(on) typ = 2.5mΩ ID = 230 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current
  – Continuous (TC = 25℃)
  – Continuous (TC = 100℃)
  – Pulsed (Note 1) Gate-Source .