The Hitachi HM62V8512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62V8512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM62V8512CI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is.
• Single 3.0 V supply: 2.7 V to 3.6 V
• Access time: 70 ns (max)
• Power dissipation Active: 6.0 mW/MHz (typ) Standby: 2.4 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature:
–40 to +85˚C
Ordering Information
Type No. HM62V8512CLTTI-7 Access time 70 ns Package 400-mil 32-pin plastic TSOP II (TTP-32D)
HM62V8512CI Series
Pin Arrangement
32-pin TSOP
A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM62V8512C |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
2 | HM62V8512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
3 | HM62V8100I |
Renesas Technology |
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) | |
4 | HM62V8128 |
Hitachi |
131072 x 8-Bit High Speed CMOS SRAM | |
5 | HM62V16100I |
Hitachi Semiconductor |
Wide Temperature Range Version | |
6 | HM62V16256B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
7 | HM62V16256C |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
8 | HM62V16256CI |
Hitachi Semiconductor |
Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) | |
9 | HM62V16258B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
10 | HM62V16512I |
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM | |
11 | HM62V16512L |
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM | |
12 | HM62V16514I |
Renesas Technology |
Wide Temperature Range Version 8 M SRAM |