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The Hitachi HM62V16256B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62V16256B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plasti.
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• Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 70 ns/85 ns (max) Power dissipation: Active: 9 mW (typ) Standby: 3 µW (typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output. Three state output Battery backup operation. 2 chip selection for battery backup
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HM62V16256B Series
Ordering Information
Type No. HM62V16256BLTT-7 HM62V16256BLTT-8 HM62V16256BLTT-7SL HM62V16256BLTT-8SL Access time 70 ns 85 ns 70 ns 85 ns Package 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)
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HM62V16256B Se.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM62V16256C |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 2 | HM62V16256CI |
Hitachi Semiconductor |
Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) |
|
| 3 | HM62V16258B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 4 | HM62V16100I |
Hitachi Semiconductor |
Wide Temperature Range Version |
|
| 5 | HM62V16512I |
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM |
|
| 6 | HM62V16512L |
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM |
|
| 7 | HM62V16514I |
Renesas Technology |
Wide Temperature Range Version 8 M SRAM |
|
| 8 | HM62V16514L |
Renesas Technology |
Wide Temperature Range Version 8 M SRAM |
|
| 9 | HM62V256 |
Hitachi |
32768-word x 8-bit Low Voltage Operation CMOS Static RAM |
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| 10 | HM62V8100I |
Renesas Technology |
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) |
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| 11 | HM62V8128 |
Hitachi |
131072 x 8-Bit High Speed CMOS SRAM |
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| 12 | HM62V8512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |
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