The HM62V16100I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. HM62V16100I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has the package variation.
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 45/55 ns (max)
• Power dissipation: Active: 9 mW/MHz (typ) Standby: 1.5 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output. Three state output
• Battery backup operation. 2 chip selection for battery backup
• Temperature range: −40 to +85°C
Rev.2.00, Oct.06.2003, page 1 of 23
HM62V16100I Series
Ordering Information
Type No. HM62V16100LTI-4 HM62V16100LTI-4SL HM62V16100LTI-5SL HM62V16100LBPI-4 HM62V16100LBPI-4SL HM62V16100LBPI-5SL Access time 4.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM62V16256B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
2 | HM62V16256C |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
3 | HM62V16256CI |
Hitachi Semiconductor |
Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) | |
4 | HM62V16258B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
5 | HM62V16512I |
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM | |
6 | HM62V16512L |
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM | |
7 | HM62V16514I |
Renesas Technology |
Wide Temperature Range Version 8 M SRAM | |
8 | HM62V16514L |
Renesas Technology |
Wide Temperature Range Version 8 M SRAM | |
9 | HM62V256 |
Hitachi |
32768-word x 8-bit Low Voltage Operation CMOS Static RAM | |
10 | HM62V8100I |
Renesas Technology |
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) | |
11 | HM62V8128 |
Hitachi |
131072 x 8-Bit High Speed CMOS SRAM | |
12 | HM62V8512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |