The Hitachi HM62V8100I Series is 8-Mbit static RAM organized 1,048,576-word × 8-bit. HM62V8100I Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48 bumps chip size pack.
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• Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55 ns (Max) Power dissipation: Active: 6.0 mW/MHz (Typ) Standby: 1.5 µW (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output. Three state output Battery backup operation. 2 chip selection for battery backup Temperature range:
–40 to +85°C
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HM62V8100I Series
Ordering Information
Type No. HM62V8100LTTI-5 HM62V8100LTTI-5SL HM62V8100LBPI-5 HM62V8100LBPI-5SL Access time 55 ns 55 ns 55 ns 55 ns 48-bumps CSP with 0.75 mm bump pitch (TBP-48A) Package .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM62V8128 |
Hitachi |
131072 x 8-Bit High Speed CMOS SRAM | |
2 | HM62V8512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
3 | HM62V8512C |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
4 | HM62V8512CI |
Hitachi Semiconductor |
Wide Temperature Range Version4 M SRAM (512-kword x 8-bit) | |
5 | HM62V16100I |
Hitachi Semiconductor |
Wide Temperature Range Version | |
6 | HM62V16256B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
7 | HM62V16256C |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
8 | HM62V16256CI |
Hitachi Semiconductor |
Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) | |
9 | HM62V16258B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
10 | HM62V16512I |
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM | |
11 | HM62V16512L |
Renesas Technology |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM | |
12 | HM62V16514I |
Renesas Technology |
Wide Temperature Range Version 8 M SRAM |