The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512CI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 3.
• Single 5 V supply
• Access time: 70 ns (max)
• Power dissipation Active: 50 mW/MHz (typ) Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature:
–40 to +85˚C
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales Dept. regarding specification.
HM628512CI Series
Ordering Information
Type No. HM628512CLPI-7 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM628512C |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
2 | HM628512 |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
3 | HM628512A |
Hitachi Semiconductor |
4M SRAM (512 KWORD X 8 BIT) | |
4 | HM628512AI |
Hitachi Semiconductor |
524288 x 8-Bit High Speed CMOS SRAM | |
5 | HM628512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
6 | HM628512BFP |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
7 | HM628512BI |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
8 | HM628511H |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
9 | HM628511HC |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
10 | HM628511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
11 | HM6281 |
H&M Semiconductor |
400KHz 32V 2A Switching Current Boost LED Constant Current Driver | |
12 | HM628100I |
Renesas |
8M SRAM |