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The Hitachi HM628100I Series is 8-Mbit static RAM organized 1,048,576-word × 8-bit. HM628100I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in s.
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• Single 5.0 V supply: 5.0 V ± 10 % Fast access time: 55 ns (max) Power dissipation: Active: 10 mW/MHz (typ) Standby: 7.5 µW (typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output. Three state output Battery backup operation. 2 chip selection for battery backup Temperature range:
–40 to +85°C
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HM628100I Series
Ordering Information
Type No. HM628100LTTI-5SL Access time 55 ns Package 400-mil 44pin plastic TSOP II (normal-bend type) (TTP-44DE)
2
HM628100I Series
Pin Arrangement
44-pin TSOP A4 A3 A2 A1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM6281 |
H&M Semiconductor |
400KHz 32V 2A Switching Current Boost LED Constant Current Driver |
|
| 2 | HM628128 |
Hitachi Semiconductor |
1 M SRAM (128-kword x 8-bit) |
|
| 3 | HM628128A |
Hitachi Semiconductor |
High Speed CMOS Static RAM |
|
| 4 | HM628128B |
Hitachi Semiconductor |
1 M SRAM (128-KWORD X 8 BIT) |
|
| 5 | HM628128D |
Hitachi |
1M SRAM |
|
| 6 | HM628128DI |
Hitachi Semiconductor |
1 M SRAM (128-kword X 8-bit) |
|
| 7 | HM62832 |
Hitachi |
8-bit CMOS Static RAM |
|
| 8 | HM62832H |
Hitachi |
32768-word x 8-bit High Speed CMOS Static RAM |
|
| 9 | HM628511H |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 10 | HM628511HC |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 11 | HM628511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 12 | HM628512 |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |
|