The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuratio.
• Single 5.0 V supply : 5.0 V ± 10 %
• Access time 10 /12 /15 ns (max)
• Completely static memory No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible All inputs and outputs
• Operating current : 180 / 160 / 140 mA (max)
• TTL standby current : 70 / 60 / 50 mA (max)
• CMOS standby current : 5 mA (max) : 1.2 mA (max) (L-version)
• Data retension current: 0.8 mA (max) (L-version)
• Data retension voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout
HM628511H Series
Ordering Information
Type No. HM628511HJP-10 HM628511HJP-12 HM628511HJP-15 HM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM628511HC |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
2 | HM628511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
3 | HM628512 |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
4 | HM628512A |
Hitachi Semiconductor |
4M SRAM (512 KWORD X 8 BIT) | |
5 | HM628512AI |
Hitachi Semiconductor |
524288 x 8-Bit High Speed CMOS SRAM | |
6 | HM628512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
7 | HM628512BFP |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
8 | HM628512BI |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
9 | HM628512C |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) | |
10 | HM628512CI |
Hitachi Semiconductor |
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) | |
11 | HM6281 |
H&M Semiconductor |
400KHz 32V 2A Switching Current Boost LED Constant Current Driver | |
12 | HM628100I |
Renesas |
8M SRAM |