HM628511HI - Hitachi Semiconductor

HM628511HI 4M High Speed SRAM (512-kword x 8-bit)

The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configurati.

Features

• Single 5.0 V supply : 5.0 V ± 10 %
• Access time 12 /15 ns (max)
• Completely static memory  No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible  All inputs and outputs
• Operating current : 160 / 140 mA (max)
• TTL standby current : 60 / 50 mA (max)
• CMOS standby current : 5 mA (max)
• Center VCC and VSS type pinout
• Temperature range:
  –40 to 85°C HM628511HI Series Ordering Information Type No. HM628511HJPI-12 HM628511HJPI-15 Access time 12 ns 15 ns Package 400-mil 36-pin plastic SOJ (CP-36D) Pin Arrangement HM628511HJPI Series A0 A1 A2 A3 A4 CS.