The Hitachi HM628128DI Series is 1-Mbit static RAM organized 131,072-kword × 8-bit. HM628128DI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628128DI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has package variatio.
• Single 5 V supply: 5 V ± 10%
• Access time: 70 ns (max)
• Power dissipation Active: 30 mW/MHz (typ) Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output Three state output
• Directly TTL compatible all inputs
• Battery backup operation 2 chip selection for battery backup
• Temperature range:
–40 to +85°C
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales Dept. regarding specification.
HM628128DI Series
Ordering I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM628128D |
Hitachi |
1M SRAM | |
2 | HM628128 |
Hitachi Semiconductor |
1 M SRAM (128-kword x 8-bit) | |
3 | HM628128A |
Hitachi Semiconductor |
High Speed CMOS Static RAM | |
4 | HM628128B |
Hitachi Semiconductor |
1 M SRAM (128-KWORD X 8 BIT) | |
5 | HM6281 |
H&M Semiconductor |
400KHz 32V 2A Switching Current Boost LED Constant Current Driver | |
6 | HM628100I |
Renesas |
8M SRAM | |
7 | HM62832 |
Hitachi |
8-bit CMOS Static RAM | |
8 | HM62832H |
Hitachi |
32768-word x 8-bit High Speed CMOS Static RAM | |
9 | HM628511H |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
10 | HM628511HC |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
11 | HM628511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
12 | HM628512 |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |