HGTG20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly.
HGTG20N60C3D Data Sheet January 2000 File Number 4494.2 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HGTG20N60C3 |
Fairchild Semiconductor |
N-Channel IGBT | |
2 | HGTG20N60C3 |
Intersil Corporation |
N-Channel IGBT | |
3 | HGTG20N60C3R |
Intersil |
N-Channel IGBTs | |
4 | HGTG20N60C3R |
HARRIS |
N-Channel IGBTs | |
5 | HGTG20N60A4 |
Fairchild Semiconductor |
N-Channel IGBT | |
6 | HGTG20N60A4 |
Intersil Corporation |
N-Channel IGBT | |
7 | HGTG20N60A4 |
ON Semiconductor |
IGBT | |
8 | HGTG20N60A4D |
Fairchild Semiconductor |
N-Channel IGBT | |
9 | HGTG20N60A4D |
ON Semiconductor |
N-Channel IGBT | |
10 | HGTG20N60B3 |
Fairchild Semiconductor |
N-Channel IGBT | |
11 | HGTG20N60B3 |
Intersil Corporation |
N-Channel IGBT | |
12 | HGTG20N60B3 |
ON Semiconductor |
N-Channel IGBT |