HGTG20N60A4 - Fairchild Semiconductor

HGTG20N60A4 N-Channel IGBT

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339. Features
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• .