HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49050.
Features
• 40A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Tim.
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBT.
UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HGTG20N60B3D |
Fairchild Semiconductor |
N-Channel IGBT | |
2 | HGTG20N60B3D |
Intersil Corporation |
N-Channel IGBT | |
3 | HGTG20N60B3D |
ON Semiconductor |
N-Channel IGBT | |
4 | HGTG20N60A4 |
Fairchild Semiconductor |
N-Channel IGBT | |
5 | HGTG20N60A4 |
Intersil Corporation |
N-Channel IGBT | |
6 | HGTG20N60A4 |
ON Semiconductor |
IGBT | |
7 | HGTG20N60A4D |
Fairchild Semiconductor |
N-Channel IGBT | |
8 | HGTG20N60A4D |
ON Semiconductor |
N-Channel IGBT | |
9 | HGTG20N60C3 |
Fairchild Semiconductor |
N-Channel IGBT | |
10 | HGTG20N60C3 |
Intersil Corporation |
N-Channel IGBT | |
11 | HGTG20N60C3D |
Fairchild Semiconductor |
N-Channel IGBT | |
12 | HGTG20N60C3D |
Intersil Corporation |
N-Channel IGBT |