HFB1N60S - SemiHow

HFB1N60S N-Channel MOSFET

HFB1N60S Sep 2009 HFB1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.3 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON).

Features

‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7S#9GS=10V ‰ 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current
  – Continuous (TC = 25ଇ)
  – Continuous (TC = 100ଇ)
  – Pulsed (Note.