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HFB1N60 Nov 2007 HFB1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.4 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) .
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
TO-92
1 2 3
1.Gate 2. Drain 3. Source D
G
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Not.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HFB1N60S |
SemiHow |
N-Channel MOSFET |
|
| 2 | HFB1N65S |
SemiHow |
N-Channel MOSFET |
|
| 3 | HFB1N70 |
SemiHow |
N-Channel MOSFET |
|
| 4 | HFB1N70S |
SemiHow |
N-Channel MOSFET |
|
| 5 | HFB12PA120C |
International Rectifier |
Soft Recovery Diode |
|
| 6 | HFB16HY20C |
International Rectifier |
Soft Recovery Diode |
|
| 7 | HFB16HY20CC |
International Rectifier |
Soft Recovery Diode |
|
| 8 | HFB16PA60C |
International Rectifier |
Ultrafast/ Soft Recovery Diode |
|
| 9 | HFB03 |
Allied Components International |
High Frequency Ferrite Beads |
|
| 10 | HFB05 |
Allied Components International |
High Frequency Ferrite Beads |
|
| 11 | HFB06TB120 |
International Rectifier |
Ultrafast/ Soft Recovery Diode |
|
| 12 | HFB08PB120 |
International Rectifier |
Ultrafast/ Soft Recovery Diode |
|