HFB1N60S |
Part Number | HFB1N60S |
Manufacturer | SemiHow |
Description | HFB1N60S Sep 2009 HFB1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.3 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
TO-92
1 2 3
1.Gate 2. Drain 3. Source D
G
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (Note... |
Document |
HFB1N60S Data Sheet
PDF 241.74KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HFB1N60 |
SemiHow |
N-Channel MOSFET | |
2 | HFB1N65S |
SemiHow |
N-Channel MOSFET | |
3 | HFB1N70 |
SemiHow |
N-Channel MOSFET | |
4 | HFB1N70S |
SemiHow |
N-Channel MOSFET | |
5 | HFB12PA120C |
International Rectifier |
Soft Recovery Diode |