International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6 amps continuo.
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• Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
BASE CATHODE
VR = 1200V VF(typ.)
* = 2.4V IF(AV) = 6.0A Qrr (typ.)= 116nC
4
2
IRRM(typ.) = 4.4A
3 ANODE 2
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
1 CATHODE
trr(typ.) = 26ns di(rec)M/dt (typ.)
* = 100A/µs
Description
International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced proces.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HFB03 |
Allied Components International |
High Frequency Ferrite Beads | |
2 | HFB05 |
Allied Components International |
High Frequency Ferrite Beads | |
3 | HFB08PB120 |
International Rectifier |
Ultrafast/ Soft Recovery Diode | |
4 | HFB08TB120 |
International Rectifier |
Ultrafast/ Soft Recovery Diode | |
5 | HFB08TB120PBF |
International Rectifier |
SOFT RECOVERY DIODE | |
6 | HFB12PA120C |
International Rectifier |
Soft Recovery Diode | |
7 | HFB16HY20C |
International Rectifier |
Soft Recovery Diode | |
8 | HFB16HY20CC |
International Rectifier |
Soft Recovery Diode | |
9 | HFB16PA60C |
International Rectifier |
Ultrafast/ Soft Recovery Diode | |
10 | HFB1N60 |
SemiHow |
N-Channel MOSFET | |
11 | HFB1N60S |
SemiHow |
N-Channel MOSFET | |
12 | HFB1N65S |
SemiHow |
N-Channel MOSFET |