HAT1048R - Renesas Technology

HAT1048R Silicon P-Channel Power MOSFET

HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features www.DataSheet4U.com • Capable of -4.5 V gate drive • Low drive current • High density mounting • Low on-resistance R DS(on) = 6.0 mΩ typ (at VGS = -10V) Outline SOP-8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S.

Features

www.DataSheet4U.com
• Capable of -4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance R DS(on) = 6.0 mΩ typ (at VGS = -10V) Outline SOP-8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1048R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature www.DataSheet4U.com Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Note2.