HAT1043M - Hitachi Semiconductor

HAT1043M Silicon P-Channel Power MOSFET

HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1043M Absolute Maximum Ratings (Ta = 25°.

Features

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• Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP
  –6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1043M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse) I DR Note 1 Note 2 Note 2 Note 3 Ratings
  –20 ±12
  –4.4
  –17.6
  –4.4 2.0 1.05 150
  –55 to +150 Unit V V A A A W W °C °C Pch (pulse) Pch (continuous) Channel temperature Stor.