H7N0401LM - Renesas Technology

H7N0401LM Silicon N-Channel MOSFET

H7N0401LD, H7N0401LS, H7N0401LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1129-0500 (Previous: ADE-208-1527C) Rev.5.00 Apr 07, 2006 Features www.DataSheet4U.com R • Low on-resistance DS (on) = 3.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 RENESAS Pa.

Features

www.DataSheet4U.com R
• Low on-resistance DS (on) = 3.1 mΩ typ.
• 4.5 V gate drive devices
• High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 H7N0401LD H7N0401LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 1 2 3 S H7N0401LM Rev.5.00 Apr 07, 2006 page 1 of 8 H7N0401LD, H7N0401LS, H7N0401LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Dr.