H7N0308AB |
Part Number | H7N0308AB |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | H7N0308AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline ... |
Features |
• Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1122-0400 (Previous: ADE-208-1569B) Rev.4.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.4.00 Sep 07, 2005 page 1 of 6 H7N0308AB Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. ... |
Document |
H7N0308AB Data Sheet
PDF 71.13KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | H7N0308CF |
Renesas |
Silicon N-Channel MOSFET | |
2 | H7N0308CF |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | H7N0308LD |
Renesas Technology |
Silicon N-Channel MOSFET | |
4 | H7N0308LM |
Renesas Technology |
Silicon N-Channel MOSFET | |
5 | H7N0308LS |
Renesas Technology |
Silicon N-Channel MOSFET |