Features P NP EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA) Complementary to GSMBT5551 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF.
P NP EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA) Complementary to GSMBT5551 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GSMBT5089 |
GTM |
TRANSISTOR | |
2 | GSMBT5551 |
GTM |
TRANSISTOR | |
3 | GSMBT1015 |
GTM |
TRANSISTOR | |
4 | GSMBT1623 |
GTM |
TRANSISTOR | |
5 | GSMBT1815 |
GTM |
TRANSISTOR | |
6 | GSMBT2014 |
GTM |
TRANSISTOR | |
7 | GSMBT2222A |
GTM |
TRANSISTOR | |
8 | GSMBT2907A |
GTM |
TRANSISTOR | |
9 | GSMBT3904 |
GTM |
TRANSISTOR | |
10 | GSMBT3906 |
GTM |
TRANSISTOR | |
11 | GSMBT4075 |
GTM |
TRANSISTOR | |
12 | GSMBT4076 |
GTM |
TRANSISTOR |