GSMBT4076 - GTM

GSMBT4076 TRANSISTOR

Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT4076 is designed for general purpose switching and amplifier applications. Excellent hFE Linearity : hFE2=25 (Min.) @VCE=6v, IC=400mA Complementary to GSMBT2015 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1.

Features

NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT4076 is designed for general purpose switching and amplifier applications. Excellent hFE Linearity : hFE2=25 (Min.) @VCE=6v, IC=400mA Complementary to GSMBT2015 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage.