GSMBT5401 |
Part Number | GSMBT5401 |
Manufacturer | GTM |
Description | Features P NP EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ ... |
Features |
P NP EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA) Complementary to GSMBT5551
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter ... |
Document |
GSMBT5401 Data Sheet
PDF 224.01KB |
Distributor | Stock | Price | Buy |
---|