GSMBT5089 - GTM

GSMBT5089 TRANSISTOR

Package Dimensions NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5089 is designed for low noise, high gain and general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. A.

Features

=10uA ,IC=0 VCB=15V, IE=0 VEB=4.5V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=5V, IC=0.1mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=0.5mA, f=20MHz VCB=5V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2% MHz pF 1/2 ISSUED DATE :2005/08/31 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or sys.