The GSC9410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Low On-resi.
*Simple Drive Requirement
*Low On-resistance
*Fast Switching
Package Dimensions
REF.
A B C D E F
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
REF.
M H L J K G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation
VGS ID @TA=25к ID @TA=70к
IDM PD @TA=25к
Linear Derating Factor
Operating Junction and Storage Temperature Ran.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GSC9406 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | GSC9431 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | GSC9435 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | GSC9435M |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | GSC945 |
GTM |
NPN EPITAXIAL SILICON TRANSISTOR | |
6 | GSC9475 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | GSC9478 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | GSC93BC46 |
GTM |
(GSC93BC46 - GSC93BC66) 2-WIRE SERIAL EEPROMS | |
9 | GSC93BC56 |
GTM |
(GSC93BC46 - GSC93BC66) 2-WIRE SERIAL EEPROMS | |
10 | GSC93BC66 |
GTM |
(GSC93BC46 - GSC93BC66) 2-WIRE SERIAL EEPROMS | |
11 | GSC9563 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
12 | GSC9575 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |