Features NPN EPITAXIAL SILICON TRANSISTOR The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor. Collector-Emitter Voltage BVCBO=50V Collector current up to 150mA High hFE linearity Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.3.
NPN EPITAXIAL SILICON TRANSISTOR The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor. Collector-Emitter Voltage BVCBO=50V Collector current up to 150mA High hFE linearity Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GSC9406 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | GSC9410 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | GSC9431 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | GSC9435 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | GSC9435M |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | GSC9475 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | GSC9478 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | GSC93BC46 |
GTM |
(GSC93BC46 - GSC93BC66) 2-WIRE SERIAL EEPROMS | |
9 | GSC93BC56 |
GTM |
(GSC93BC46 - GSC93BC66) 2-WIRE SERIAL EEPROMS | |
10 | GSC93BC66 |
GTM |
(GSC93BC46 - GSC93BC66) 2-WIRE SERIAL EEPROMS | |
11 | GSC9563 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
12 | GSC9575 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |