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GSC9410 |
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| Part Number | GSC9410 |
| Manufacturer | GTM |
| Description | The GSC9410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all com... |
| Features |
*Simple Drive Requirement *Low On-resistance *Fast Switching
Package Dimensions
REF.
A B C D E F
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
REF.
M H L J K G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation
VGS ID @TA=25к ID @TA=70к
IDM PD @TA=25к
Linear Derating Factor
Operating Junction and Storage Temperature Ran... |
| Document |
 GSC9410 Data Sheet
PDF 263.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GSC9406 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | GSC9431 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | GSC9435 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | GSC9435M |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | GSC945 |
GTM |
NPN EPITAXIAL SILICON TRANSISTOR |
|