Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain.
Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -40 ±25 -6 -4.8 -30 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GSC9575 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | GSC9585 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | GSC93BC46 |
GTM |
(GSC93BC46 - GSC93BC66) 2-WIRE SERIAL EEPROMS | |
4 | GSC93BC56 |
GTM |
(GSC93BC46 - GSC93BC66) 2-WIRE SERIAL EEPROMS | |
5 | GSC93BC66 |
GTM |
(GSC93BC46 - GSC93BC66) 2-WIRE SERIAL EEPROMS | |
6 | GSC9406 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | GSC9410 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | GSC9431 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
9 | GSC9435 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
10 | GSC9435M |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
11 | GSC945 |
GTM |
NPN EPITAXIAL SILICON TRANSISTOR | |
12 | GSC9475 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |