te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off lebetween switching performance and low on-state Obsolete Product(s) - Obsobehavior. TAB 3 1 DPAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGD10NC60ST4 STGP10NC60S GD10NC60S GP10NC60S Package DPAK TO-220 De.
■ Optimized performance for medium operating
frequencies up to 5 kHz in hard switching
TAB
■ Low on-voltage drop (VCE(sat))
t(s)Application uc
■ Motor drive rodDescription te PThis IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
lebetween switching performance and low on-state Obsolete Product(s) - Obsobehavior.
TAB
3 1
DPAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary Order codes
Marking
STGD10NC60ST4 STGP10NC60S
GD10NC60S GP10NC60S
Package DPAK TO-220
December 2010
Doc ID 15931 Rev 2
Packaging Tape and reel
Tube
1/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GP10NC60HD |
STMicroelectronics |
very fast IGBT | |
2 | GP10NC60KD |
STMicroelectronics |
short-circuit rugged IGBT | |
3 | GP10N |
General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER | |
4 | GP10N |
Zowie Technology Corporation |
SINTERED GLASS PASSIVATED JUNCTION RECTIFIER | |
5 | GP10N |
GOOD-ARK |
Glass Passivated Junction Rectifiers | |
6 | GP10N |
Vishay Siliconix |
Glass Passivated Junction Rectifier | |
7 | GP10NB37LZ |
STMicroelectronics |
internally clamped IGBT | |
8 | GP10NB60S |
STMicroelectronics |
low drop IGBT | |
9 | GP10NB60SD |
STMicroelectronics |
low drop IGBT | |
10 | GP10 |
Yokogawa |
Paperless Recorder | |
11 | GP100 |
DIOTEC Electronics Corporation |
(GP100 - GP110) 1 AMP HIGH RELIABILITY SILICON DIODES | |
12 | GP100 |
Goodpoly |
PPTC Thermistors |