This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220 TAB 3 1 D2PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10NB60ST4 STGP10NB60S GB10NB60S GP10NB60S Package D2PAK TO-220 September 2011 Doc ID 1.
■ Low on-voltage drop (VCE(sat))
■ High current capability
Applications
■ Light dimmer
■ Static relays
■ Motor drive
Description
This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
TAB
3 2 1
TO-220
TAB
3 1
D2PAK
Figure 1. Internal schematic diagram
Table 1. Device summary Order codes
Marking
STGB10NB60ST4 STGP10NB60S
GB10NB60S GP10NB60S
Package D2PAK TO-220
September 2011
Doc ID 10985 Rev 4
Packaging Tape and reel
Tube
1/19
www.st.com
19
Contents
Contents
STGB10NB60S, STGP10NB60S
1 E.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GP10NB60SD |
STMicroelectronics |
low drop IGBT | |
2 | GP10NB37LZ |
STMicroelectronics |
internally clamped IGBT | |
3 | GP10N |
General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER | |
4 | GP10N |
Zowie Technology Corporation |
SINTERED GLASS PASSIVATED JUNCTION RECTIFIER | |
5 | GP10N |
GOOD-ARK |
Glass Passivated Junction Rectifiers | |
6 | GP10N |
Vishay Siliconix |
Glass Passivated Junction Rectifier | |
7 | GP10NC60HD |
STMicroelectronics |
very fast IGBT | |
8 | GP10NC60KD |
STMicroelectronics |
short-circuit rugged IGBT | |
9 | GP10NC60S |
STMicroelectronics |
fast IGBT | |
10 | GP10 |
Yokogawa |
Paperless Recorder | |
11 | GP100 |
DIOTEC Electronics Corporation |
(GP100 - GP110) 1 AMP HIGH RELIABILITY SILICON DIODES | |
12 | GP100 |
Goodpoly |
PPTC Thermistors |