GP10NB60SD - STMicroelectronics

GP10NB60SD low drop IGBT

This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGF10NB60SD STGP10NB60SD GF10NB60SD GP10NB60SD Package TO-220FP TO-220 September 2011 .

Features

■ Low on-voltage drop (VCE(sat))
■ High current capability
■ Very soft ultra fast recovery antiparallel diode Applications
■ Light dimmer
■ Static relays
■ Motor drive Description This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGF10NB60SD STGP10NB60SD GF10NB60SD GP10NB60SD Package TO-220FP TO-220 September 2011 Doc ID 11860 Rev 3 Packaging Tube Tube 1/15 www.st.com 15.