This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drives TAB 3 1 D2PAK TAB 3 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diag.
■ Lower on voltage drop (VCE(sat))
■ Lower CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
■ Short-circuit withstand time 10µs
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Applications
■ High frequency motor controls
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drives
TAB
3 1
D2PAK
TAB
3 1
DPAK
TAB
3 2 1
TO-220FP
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GP10NC60HD |
STMicroelectronics |
very fast IGBT | |
2 | GP10NC60S |
STMicroelectronics |
fast IGBT | |
3 | GP10N |
General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER | |
4 | GP10N |
Zowie Technology Corporation |
SINTERED GLASS PASSIVATED JUNCTION RECTIFIER | |
5 | GP10N |
GOOD-ARK |
Glass Passivated Junction Rectifiers | |
6 | GP10N |
Vishay Siliconix |
Glass Passivated Junction Rectifier | |
7 | GP10NB37LZ |
STMicroelectronics |
internally clamped IGBT | |
8 | GP10NB60S |
STMicroelectronics |
low drop IGBT | |
9 | GP10NB60SD |
STMicroelectronics |
low drop IGBT | |
10 | GP10 |
Yokogawa |
Paperless Recorder | |
11 | GP100 |
DIOTEC Electronics Corporation |
(GP100 - GP110) 1 AMP HIGH RELIABILITY SILICON DIODES | |
12 | GP100 |
Goodpoly |
PPTC Thermistors |