GBAS70S - GTM

GBAS70S SURFACE MOUNT SCHOTTKY BARRIER DIODE

ISSUED DATE :2003/04/10 REVISED DATE :2005/12/28B S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A These Schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface moun.

Features

r Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R JA Ratings +125 -65 ~ +125 70 70 100 445 225 Unit V mA mA /W mW PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF unless otherwise noted) Min. 70 Typ. Max. 410 750 1000 100 10 2.0 5.0 nA uA pF ns mV Unit V IR=10 A IF1=1mA IF1=10mA IF2=15mA VR1=50V VR2=70V VR=0V, f=1MHz IF=IR=10mA, RL =100 , Irr=1mA Test Conditions Reverse Leakage Current Total Capacitance Reverse Recover Time IR CT Trr GBAS70/A/C/S Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2003/04/10 REVISED .