Package Dimensions REF. A B C D E F Min. 2.70 2.40 1.40 0.35 0 0.45 Millimeter Max. 3.10 2.80 1.60 0.50 0.10 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings at TA = 25 Parameter Operating Junction Temperature Storage Temperature Maximum Repetitive Peak Reverse Voltage Thermal Res.
nt Total Power Dissipation Symbol Tj Tstg VRRM R JA Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225 Unit V /W A A mW IFSM Io PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300uS) Reverse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF IR CT Trr unless otherwise noted) Min. 40 Typ. Max. 380 1000 200 5.0 5.0 Unit V mV nA pF ns IR=10 A IF1=1mA IF2=40mA VR=30V VR=0V, f=1MHz IF=IR=10mA, RL=100 , Irr=1mA Test Conditions GBAS40 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2003/05/05 REVISED DATE :2005/1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GBAS40-04 |
GTM |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
2 | GBAS40-06 |
GTM |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
3 | GBAS40 |
GTM |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
4 | GBAS16 |
GTM |
SWITCHING DIODE | |
5 | GBAS70 |
GTM |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
6 | GBAS70A |
GTM |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
7 | GBAS70C |
GTM |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
8 | GBAS70S |
GTM |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
9 | GBAT34 |
GTM |
Schottky Diode | |
10 | GBAT54 |
GTM |
Silicon Schottky Barrier Double Diodes | |
11 | GBAT54A |
GTM |
Silicon Schottky Barrier Double Diodes | |
12 | GBAT54C |
GTM |
Silicon Schottky Barrier Double Diodes |