GBAS40-04 - GTM

GBAS40-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE

Package Dimensions REF. A B C D E F Min. 2.70 2.40 1.40 0.35 0 0.45 Millimeter Max. 3.10 2.80 1.60 0.50 0.10 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings at TA = 25 Parameter Operating Junction Temperature Storage Temperature Maximum Repetitive Peak Reverse Voltage Thermal Res.

Features

nt Total Power Dissipation Symbol Tj Tstg VRRM R JA Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225 Unit V /W A A mW IFSM Io PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300uS) Reverse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF IR CT Trr unless otherwise noted) Min. 40 Typ. Max. 380 1000 200 5.0 5.0 Unit V mV nA pF ns IR=10 A IF1=1mA IF2=40mA VR=30V VR=0V, f=1MHz IF=IR=10mA, RL=100 , Irr=1mA Test Conditions GBAS40 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2003/05/05 REVISED DATE :2005/1.