GBAT54C - GTM

GBAT54C Silicon Schottky Barrier Double Diodes

Silicon Schottky Barrier Double Diodes . 1/2 Package Dimensions REF. A B C D E F Min. 2.70 2.40 1.40 0.35 0 0.45 Millimeter Max. 3.10 2.80 1.60 0.50 0.10 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Style : Pin 1.Anode 2.Cathode 3.Common Connection Symbol Tj Tstg Ratings +125 -65 ~ +125 30 200 300 600 P.

Features

CT Trr Reverse Current Total Capacitance Reverse Recover Time 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu .