GB352N thru GB356N GB352N/GB353N/GB354N/GB355N/GB356N Pb Pb Free Plating Product 35 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators Feature: Low leakage Low forward voltage drop High current capability High forward surge current capability Application: Block Diode/Alternator Diode with AEC-Q101 Grade Quality Stack Silicon.
gle Phase, half wave, 60Hz, resistive or inductive load
• For capacitive load derate current by 20%
Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current, At TC = 105℃ Peak Forward Surge Current 8.3mS single half sine wave superimposed on rated load (JEDEC method) Rating for fusing (t<8.3ms) Maximum Instantaneous Forward Voltage Drop at 100A
Maximum DC Reverse Current at Rated TA=25℃
DC Blocking Voltage
TA=100℃
SYMBOLS
V RRM V RMS V DC
GB352N 200 140 200
GB353N 300 210 300
GB354N 400 280 400
GB355N GB356N
500
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GB351N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes | |
2 | GB352N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes | |
3 | GB354N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes | |
4 | GB355N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes | |
5 | GB356N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes | |
6 | GB30NC60K |
STMicroelectronics |
IGBT | |
7 | GB30NC60W |
STMicroelectronics |
IGBT | |
8 | GB30RF60K |
International Rectifier |
IGBT PIM MODULE | |
9 | GB30V60DF |
STMicroelectronics |
IGBT | |
10 | GB3221 |
ON Semiconductor |
Preconfigured DSP System | |
11 | GB3225 |
ON Semiconductor |
Preconfigured DSP System | |
12 | GB330 |
GTM |
High Frequency Inverter |