GB30NC60K - STMicroelectronics

GB30NC60K IGBT

oleThis IGBT utilizes the advanced PowerMESH™ sprocess resulting in an excellent trade-off bbetween switching performance and low on-state Obsolete Product(s) - Obehavior. 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB30NC60KT4 GB30NC60K STGP30NC60K GP30NC60K Package D²PAK TO-220 Packa.

Features

■ Low on-voltage drop (VCE(sat))
■ Low Cres / Cies ratio (no cross conduction susceptibility) )
■ Short circuit withstand time 10 µs ct(sApplications du
■ High frequency inverters ro
■ Motor drivers te PDescription oleThis IGBT utilizes the advanced PowerMESH™ sprocess resulting in an excellent trade-off bbetween switching performance and low on-state Obsolete Product(s) - Obehavior. 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB30NC60KT4 GB30NC60K STGP30NC60K GP30NC60K Package D²PAK TO-220 Packaging Tape and reel Tube M.