This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(.
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
G (1) Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and swi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GB30NC60K |
STMicroelectronics |
IGBT | |
2 | GB30NC60W |
STMicroelectronics |
IGBT | |
3 | GB30RF60K |
International Rectifier |
IGBT PIM MODULE | |
4 | GB3221 |
ON Semiconductor |
Preconfigured DSP System | |
5 | GB3225 |
ON Semiconductor |
Preconfigured DSP System | |
6 | GB330 |
GTM |
High Frequency Inverter | |
7 | GB340 |
GTM |
High Frequency Inverter | |
8 | GB351N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes | |
9 | GB352N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes | |
10 | GB353N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes | |
11 | GB354N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes | |
12 | GB355N |
Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes |