GB30RF60K - International Rectifier

GB30RF60K IGBT PIM MODULE

Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE Features • • • • Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10μs Short Circuit Capability Square RBSOA VCES = 600V IC = 27A @ TC=80°C tsc > 10μs @ TJ =150°C ECONO2 PIM VCE(on) typ. = 2.04V • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics • Positive VCE (on) Temper.

Features

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• Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10μs Short Circuit Capability Square RBSOA VCES = 600V IC = 27A @ TC=80°C tsc > 10μs @ TJ =150°C ECONO2 PIM VCE(on) typ. = 2.04V
• HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE Benefits
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• Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Re.