GANE3R9-150QBA - nexperia

GANE3R9-150QBA Gallium Nitride (GaN) FET

The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capabili.

Features

• Enhancement mode - normally-off power switch
• Ultra high frequency switching capability
• No body diode
• Low gate charge, low output charge
• Qualified for standard applications
• RoHS, Pb-free, REACH-compliant
• High efficiency and high power density
• Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm 3. Applications
• High power density and high efficiency power conversion
• AC-to-DC converters, (secondary stage)
• High frequency DC-to-DC converters in 48 V systems
• Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
• Datacom and telecom (AC-to.