GAN111-650WSB - nexperia

GAN111-650WSB Gallium Nitride (GaN) FET

The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefits • Ultra-low reverse recovery charge • Simple gate drive (0 V t.

Features

• Ultra-low reverse recovery charge
• Simple gate drive (0 V to +10 V or +12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability 3. Applications
• Hard and soft switching converters for industrial and datacom power
• AC/DC Bridgeless totem-pole PFC
• DC/DC High-frequency resonant converters
• Datacom and telecom (AC/DC and DC/DC) converters
• Solar (PV) inverters
• Servo motor drives
• TV PSU and LED drivers 4. Quick reference data Tabl.