The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefits • Simplified driver design as standard level MOSF.
• Simplified driver design as standard level MOSFET gate drivers can be used:
• 0 V to 12 V drive voltage
• Gate threshold voltage VGSth of 4 V
• Robust gate oxide with ±20 V VGS rating
• High gate threshold voltage of 4 V for gate bounce immunity
• Low body diode Vf for reduced losses and simplified dead-time adjustments
• Transient over-voltage capability for increased robustness
• CCPAK package technology:
• Improved reliability, with reduced Rth(j-mb) for optimal cooling
• Lower inductances for lower switching losses and EMI
• 150 °C maximum junction temperature
• High Board Level Reliabil.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GAN039-650NBB |
nexperia |
Gallium Nitride (GaN) FET | |
2 | GAN039-650NBBA |
nexperia |
GaN FET | |
3 | GAN041-650WSB |
nexperia |
GaN FET | |
4 | GAN063-650WSA |
nexperia |
GaN FET | |
5 | GAN080-650EBE |
nexperia |
GaN FET | |
6 | GAN111-650WSB |
nexperia |
Gallium Nitride (GaN) FET | |
7 | GAN140-650EBE |
nexperia |
GaN FET | |
8 | GAN140-650FBE |
nexperia |
GaN FET | |
9 | GAN190-650EBE |
nexperia |
GaN FET | |
10 | GAN190-650FBE |
nexperia |
GaN FET | |
11 | GAN3R2-100CBE |
nexperia |
GaN FET | |
12 | GAN7R0-150LBE |
nexperia |
GaN FET |